Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

Yukinori Morita, Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Shinji Migita, Kazuhiko Endo, Shin Ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Takashi Matsukawa, Hiroyuki Ota

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

A novel tunnel FinFET equipped with a SiGe/Si heterojunction and a multilayer fin-channel has been experimentally demonstrated. A high-quality SiGe layer is epitaxially grown on a heavily doped Si source as a tunnel junction. A FinFET-like hetero-multilayer channel with a trigate configuration significantly increases the drain current compared with conventional SiGe/Si heterojunction parallel-plate tunnel FETs.

Original languageEnglish
Article number04EB06
JournalJapanese journal of applied physics
Volume55
Issue number4
DOIs
Publication statusPublished - 2016 Apr
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Morita, Y., Fukuda, K., Mori, T., Mizubayashi, W., Migita, S., Endo, K., O'Uchi, S. I., Liu, Y., Masahara, M., Matsukawa, T., & Ota, H. (2016). Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET. Japanese journal of applied physics, 55(4), [04EB06]. https://doi.org/10.7567/JJAP.55.04EB06