Introduction of a high selectivity etching process with advanced SiNx etch gas in the fabrication of FinFET structures

T. Kojiri, Tomoyuki Suwa, K. Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We evaluated the etching characteristics of a developed prototype hydrofluorocarbon-based SiNx etch gas. The developed gas has higher etching selectivity to poly-Si and SiO2 than conventional SiNx etch gases and a maximum selectivity of 62 to poly-Si and of over 100 to SiO2 were obtained. These highly selective etching chemicals are required for the development of three-dimensional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). In this work, we focused on Fin Field Effect Transistors (FinFETs), and in particular, FinFET structures that were fabricated by application of the developed gas to the gate spacer etch process. The FinFET structure fabricated with the developed gas is superior to that of the structure fabricated with CH3F, which is conventionally used for SiNx etching. We found that the developed gas is a promising etching gas for future high selectivity etching technologies.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
EditorsK. Kakushima, F. Roozeboom, P. J. Timans, S. De Gendt, Z. Karim, E. P. Gusev, V. Narayanan
PublisherElectrochemical Society Inc.
Pages23-30
Number of pages8
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2016 Jan 1
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting - San Diego, United States
Duration: 2016 May 292016 Jun 2

Publication series

NameECS Transactions
Number4
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
CountryUnited States
CitySan Diego
Period16/5/2916/6/2

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Introduction of a high selectivity etching process with advanced SiN<sub>x</sub> etch gas in the fabrication of FinFET structures'. Together they form a unique fingerprint.

  • Cite this

    Kojiri, T., Suwa, T., Hashimoto, K., Teramoto, A., Kuroda, R., & Sugawa, S. (2016). Introduction of a high selectivity etching process with advanced SiNx etch gas in the fabrication of FinFET structures. In K. Kakushima, F. Roozeboom, P. J. Timans, S. De Gendt, Z. Karim, E. P. Gusev, & V. Narayanan (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 (4 ed., pp. 23-30). (ECS Transactions; Vol. 72, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/07204.0023ecst