TY - JOUR
T1 - Introducing nonuniform strain to graphene using dielectric nanopillars
AU - Tomori, Hikari
AU - Kanda, Akinobu
AU - Goto, Hidenori
AU - Ootuka, Youiti
AU - Tsukagoshi, Kazuhito
AU - Moriyama, Satoshi
AU - Watanabe, Eiichiro
AU - Tsuya, Daiju
PY - 2011/7
Y1 - 2011/7
N2 - A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.
AB - A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.
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U2 - 10.1143/APEX.4.075102
DO - 10.1143/APEX.4.075102
M3 - Article
AN - SCOPUS:79960226753
SN - 1882-0778
VL - 4
JO - Applied Physics Express
JF - Applied Physics Express
IS - 7
M1 - 075102
ER -