Introducing nonuniform strain to graphene using dielectric nanopillars

Hikari Tomori, Akinobu Kanda, Hidenori Goto, Youiti Ootuka, Kazuhito Tsukagoshi, Satoshi Moriyama, Eiichiro Watanabe, Daiju Tsuya

Research output: Contribution to journalArticlepeer-review

99 Citations (Scopus)


A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate, and graphene sections between pillars are attached to the substrate. The strength and spatial pattern of the strain can be controlled by the size and separation of the pillars. Application of strain is confirmed by Raman spectroscopy as well as from scanning electron microscopy (SEM) images. From SEM images, the maximum stretch of the graphene film reaches about 20%. This technique can be applied to the formation of band gaps in graphene.

Original languageEnglish
Article number075102
JournalApplied Physics Express
Issue number7
Publication statusPublished - 2011 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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