Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature

Yutaka Ohno, Hideto Yoshida, Seiji Takeda, Jianbo Liang, Naoteru Shigekawa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature is examined by plane-view transmission electron microscopy (TEM) and cross-sectional scanning TEM using damage-free TEM specimens prepared only by mechanochemical etching. The bonded heterointerfaces include an As-deficient crystalline GaAs layer with a thickness of less than 1 nm and an amorphous Si layer with a thickness of approximately 3 nm, introduced by the irradiation of an Ar atom beam for surface activation before bonding. It is speculated that the interface resistance mainly originates from the As-deficient defects in the former layer.

Original languageEnglish
Article number02BA01
JournalJapanese journal of applied physics
Volume57
Issue number2
DOIs
Publication statusPublished - 2018 Feb

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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