TY - JOUR
T1 - Intrinsic magnetoresistance in metal films on ferromagnetic insulators
AU - Grigoryan, Vahram L.
AU - Guo, Wei
AU - Bauer, Gerrit E.W.
AU - Xiao, Jiang
N1 - Publisher Copyright:
© 2014 American Physical Society.
PY - 2014/10/30
Y1 - 2014/10/30
N2 - We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal/ferromagnetic insulator bilayers. It depends on the angle between current and magnetization directions as found for the "spin Hall magnetoresistance" mechanism, i.e., the combined action of spin Hall and inverse spin Hall effects. By the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. [Phys. Rev. Lett. 110, 206601 (2013)PRLTAO0031-900710.1103/PhysRevLett.110.206601] is a bulk metal or interface effect. The interfacial Rashba-induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance by its dependence on the metal film thickness.
AB - We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal/ferromagnetic insulator bilayers. It depends on the angle between current and magnetization directions as found for the "spin Hall magnetoresistance" mechanism, i.e., the combined action of spin Hall and inverse spin Hall effects. By the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. [Phys. Rev. Lett. 110, 206601 (2013)PRLTAO0031-900710.1103/PhysRevLett.110.206601] is a bulk metal or interface effect. The interfacial Rashba-induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance by its dependence on the metal film thickness.
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U2 - 10.1103/PhysRevB.90.161412
DO - 10.1103/PhysRevB.90.161412
M3 - Article
AN - SCOPUS:84908582171
VL - 90
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 0163-1829
IS - 16
M1 - 161412
ER -