We predict a magnetoresistance induced by the interfacial Rashba spin-orbit coupling in normal metal/ferromagnetic insulator bilayers. It depends on the angle between current and magnetization directions as found for the "spin Hall magnetoresistance" mechanism, i.e., the combined action of spin Hall and inverse spin Hall effects. By the identical phenomenology it is not obvious whether the magnetoresistance reported by Nakayama et al. [Phys. Rev. Lett. 110, 206601 (2013)PRLTAO0031-900710.1103/PhysRevLett.110.206601] is a bulk metal or interface effect. The interfacial Rashba-induced magnetoresistance may be distinguished from the bulk metal spin Hall magnetoresistance by its dependence on the metal film thickness.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2014 Oct 30|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics