Intrinsic Josephson junctions in c-axis-oriented La1.85Sr 0.15CuO4 thin films

Y. Mizugaki; Y. Uematsu; S. J. Kim; J. Chen; K. Nakajima; T. Yamashita; H. Sato; M. Naito

doi:10.1063/1.1595139

Intrinsic Josephson junctions in c-axis-oriented La_1.85Sr _0.15CuO₄ thin films

Y. Mizugaki, Y. Uematsu, S. J. Kim, J. Chen, K. Nakajima, T. Yamashita, H. Sato, M. Naito

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The current-voltage characteristics (IVC) of intrinsic Josephson junctions (IJJ) in c-axis-oriented La_2-xSr_xCuO₄ (LSCO) thin films were demonstrated. The large intrinsic junctions (LIJ) with a mesa structure exhibited resistively shunted junction (RSJ)-like IVCs. The results indicated that the IJJs in the LSCO thin films are characterized as stacked SIS Josephson junctions and that the grain boundaries act as shunting resistance.

Original language	English
Pages (from-to)	2534-2537
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.1595139
Publication status	Published - 2003 Aug 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Intrinsic Josephson junctions in c-axis-oriented La1.85Sr 0.15CuO4 thin films",

abstract = "The current-voltage characteristics (IVC) of intrinsic Josephson junctions (IJJ) in c-axis-oriented La2-xSrxCuO4 (LSCO) thin films were demonstrated. The large intrinsic junctions (LIJ) with a mesa structure exhibited resistively shunted junction (RSJ)-like IVCs. The results indicated that the IJJs in the LSCO thin films are characterized as stacked SIS Josephson junctions and that the grain boundaries act as shunting resistance.",

author = "Y. Mizugaki and Y. Uematsu and Kim, {S. J.} and J. Chen and K. Nakajima and T. Yamashita and H. Sato and M. Naito",

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AU - Mizugaki, Y.

AU - Uematsu, Y.

AU - Kim, S. J.

AU - Chen, J.

AU - Nakajima, K.

AU - Yamashita, T.

AU - Sato, H.

AU - Naito, M.

PY - 2003/8/15

Y1 - 2003/8/15

N2 - The current-voltage characteristics (IVC) of intrinsic Josephson junctions (IJJ) in c-axis-oriented La2-xSrxCuO4 (LSCO) thin films were demonstrated. The large intrinsic junctions (LIJ) with a mesa structure exhibited resistively shunted junction (RSJ)-like IVCs. The results indicated that the IJJs in the LSCO thin films are characterized as stacked SIS Josephson junctions and that the grain boundaries act as shunting resistance.

AB - The current-voltage characteristics (IVC) of intrinsic Josephson junctions (IJJ) in c-axis-oriented La2-xSrxCuO4 (LSCO) thin films were demonstrated. The large intrinsic junctions (LIJ) with a mesa structure exhibited resistively shunted junction (RSJ)-like IVCs. The results indicated that the IJJs in the LSCO thin films are characterized as stacked SIS Josephson junctions and that the grain boundaries act as shunting resistance.

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Intrinsic Josephson junctions in c-axis-oriented La_1.85Sr _0.15CuO₄ thin films

Abstract

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