Intralayer backscattering in narrow GaAs/AlxGa1-xAs/GaAs bilayer channels

G. Yusa, K. Muraki, T. Saku, Y. Hirayama

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We study the magnetoresistance Rxx, and the Hall resistance Rxy in GaAs/AlxGa1-xAs/GaAs bilayer systems, in which the electron channel of each layer is latterally confined in a narrow Hall bar of width W=0.3–5μm. We observe that intralayer backscattering destroy some states peculiar to the bilayer system. Rxy plateaus at odd filling factors largely deviate from their integer values in monolayer quantum Hall (QH) states due to backscattering, while the normal Rxy plateau is observed from coupled QH states. Examining the backscattering both in the Hall bars and in their voltage probes, we discuss the suppression of the intralayer backscattering between edge channels strongly modified by the interlayer charge transfer between the front and the back channels.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number8
DOIs
Publication statusPublished - 2004 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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