TY - GEN
T1 - Intra-and inter-chip electrical interconnection formed by directed self assembly of nanocomposite containing diblock copolymer and nanometal
AU - Murugesan, M.
AU - Fukushima, T.
AU - Bea, J. C.
AU - Hashimoto, H.
AU - Koyanagi, Mitsumasa
N1 - Funding Information:
This work was supported by NEDO (New Energy and Industrial Technology Development Organization)
Funding Information:
ACKNOWLEDGMENT This work was performed as a part of the “Advanced research program for energy and environmental technologies” supported by NEDO (New Energy and Industrial Technology Development Organization). This work was performed at Junichi Nishizawa Research Center, Micro-Nano Machining Center, and Global INTegration Initiative (GINTI) in Tohoku University, Japan.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/5/25
Y1 - 2018/5/25
N2 - Advanced directed-self-assembly (DSA) has been deployed to form vertical cylindrical structures inside deep Si trenches and via with the cylinders' width at nm-scale for making electrical interconnection in the vertically stacked 3D-LSIs/ICs. DSA reaction for PS(57k)-b-PMMA(25k) diblock copolymer (DBC) with PS:PMMA ratio as 2:1 have resulted into the formation of 20 nm-width nano-cylinders (NC) running parallel and straight up to > 7 μm inside the 10 μm-deep Si trenches. Upon increasing the molecular weight of PS from 57k to 140k (keeping the ratio of DBC as 2:1), the width of NC has enlarged from 20 nm to > 80 nm. A ∼100 nm-width metal interconnects were formed inside the ∼500 nm-width via of the bonded 3D-ICs, for Sn and In metals. Based on Self Consistent Field theory, both 2D & 3D simulation results showed that the metal particles attached to PMMA of DBC are connected vertically and forms cylinder, as long as the metal particles are well attached to PMMA.
AB - Advanced directed-self-assembly (DSA) has been deployed to form vertical cylindrical structures inside deep Si trenches and via with the cylinders' width at nm-scale for making electrical interconnection in the vertically stacked 3D-LSIs/ICs. DSA reaction for PS(57k)-b-PMMA(25k) diblock copolymer (DBC) with PS:PMMA ratio as 2:1 have resulted into the formation of 20 nm-width nano-cylinders (NC) running parallel and straight up to > 7 μm inside the 10 μm-deep Si trenches. Upon increasing the molecular weight of PS from 57k to 140k (keeping the ratio of DBC as 2:1), the width of NC has enlarged from 20 nm to > 80 nm. A ∼100 nm-width metal interconnects were formed inside the ∼500 nm-width via of the bonded 3D-ICs, for Sn and In metals. Based on Self Consistent Field theory, both 2D & 3D simulation results showed that the metal particles attached to PMMA of DBC are connected vertically and forms cylinder, as long as the metal particles are well attached to PMMA.
KW - directed-self-assembly (DSA)
KW - three-dimensional integration (3D-LSI/IC)
KW - through-Si via (TSV)
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U2 - 10.1109/IRPS.2018.8353589
DO - 10.1109/IRPS.2018.8353589
M3 - Conference contribution
AN - SCOPUS:85046964664
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 4D.21-4D.27
BT - 2018 IEEE International Reliability Physics Symposium, IRPS 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE International Reliability Physics Symposium, IRPS 2018
Y2 - 11 March 2018 through 15 March 2018
ER -