Intra-and inter-chip electrical interconnection formed by directed self assembly of nanocomposite containing diblock copolymer and nanometal

M. Murugesan, T. Fukushima, J. C. Bea, H. Hashimoto, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Advanced directed-self-assembly (DSA) has been deployed to form vertical cylindrical structures inside deep Si trenches and via with the cylinders' width at nm-scale for making electrical interconnection in the vertically stacked 3D-LSIs/ICs. DSA reaction for PS(57k)-b-PMMA(25k) diblock copolymer (DBC) with PS:PMMA ratio as 2:1 have resulted into the formation of 20 nm-width nano-cylinders (NC) running parallel and straight up to > 7 μm inside the 10 μm-deep Si trenches. Upon increasing the molecular weight of PS from 57k to 140k (keeping the ratio of DBC as 2:1), the width of NC has enlarged from 20 nm to > 80 nm. A ∼100 nm-width metal interconnects were formed inside the ∼500 nm-width via of the bonded 3D-ICs, for Sn and In metals. Based on Self Consistent Field theory, both 2D & 3D simulation results showed that the metal particles attached to PMMA of DBC are connected vertically and forms cylinder, as long as the metal particles are well attached to PMMA.

Original languageEnglish
Title of host publication2018 IEEE International Reliability Physics Symposium, IRPS 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4D.21-4D.27
ISBN (Electronic)9781538654798
DOIs
Publication statusPublished - 2018 May 25
Event2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
Duration: 2018 Mar 112018 Mar 15

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2018-March
ISSN (Print)1541-7026

Other

Other2018 IEEE International Reliability Physics Symposium, IRPS 2018
CountryUnited States
CityBurlingame
Period18/3/1118/3/15

Keywords

  • directed-self-assembly (DSA)
  • three-dimensional integration (3D-LSI/IC)
  • through-Si via (TSV)

ASJC Scopus subject areas

  • Engineering(all)

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