Intersubband scattering in double-gate MOSFETs

Kei Takashina; Yukinori Ono; Akira Fujiwara; Yasuo Takahashi; Yoshiro Hirayama

doi:10.1109/TNANO.2006.880425

Intersubband scattering in double-gate MOSFETs

Kei Takashina, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Quantum mechanical features of even the most basic of semiconductor components can be expected to become of paramount importance for future nanoelectronics and quantum information technology. Here, we show that the conductivity of even a two-dimensionally extended double-gate silicon-on-insulator metal-oxide-silicon field-effect transistor can develop a distinct peak structure in its top-gate voltage dependence at low temperatures, due to the discreteness of sub-band edges resulting from quantum mechanical confinement in the vertical gating direction. Our findings are confirmed using low-temperature magnetic field measurements.

Original language	English
Article number	1695937
Pages (from-to)	430-435
Number of pages	6
Journal	IEEE Transactions on Nanotechnology
Volume	5
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2006.880425
Publication status	Published - 2006 Sep
Externally published	Yes

Keywords

Conductivity
Quantization
Quantum wells
Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2006.880425

Cite this

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title = "Intersubband scattering in double-gate MOSFETs",

abstract = "Quantum mechanical features of even the most basic of semiconductor components can be expected to become of paramount importance for future nanoelectronics and quantum information technology. Here, we show that the conductivity of even a two-dimensionally extended double-gate silicon-on-insulator metal-oxide-silicon field-effect transistor can develop a distinct peak structure in its top-gate voltage dependence at low temperatures, due to the discreteness of sub-band edges resulting from quantum mechanical confinement in the vertical gating direction. Our findings are confirmed using low-temperature magnetic field measurements.",

keywords = "Conductivity, Quantization, Quantum wells, Silicon-on-insulator (SOI) technology",

author = "Kei Takashina and Yukinori Ono and Akira Fujiwara and Yasuo Takahashi and Yoshiro Hirayama",

note = "Funding Information: Manuscript received June 28, 2005; revised April 14, 2006. This paper is based on work presented at the Silicon Nanoelectronics Workshop 2005 (Kyoto). This work has also been presented at AWAD 2005 (Seoul). The work of Y. Ono, Y. Takahashi, and Y. Hirayama was supported in part by a Grant-in-Aid for Scientific Research from JSPS. The review of this paper was arranged by Associate Editor B. G. Park.",

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AU - Takashina, Kei

AU - Ono, Yukinori

AU - Fujiwara, Akira

AU - Takahashi, Yasuo

AU - Hirayama, Yoshiro

N1 - Funding Information: Manuscript received June 28, 2005; revised April 14, 2006. This paper is based on work presented at the Silicon Nanoelectronics Workshop 2005 (Kyoto). This work has also been presented at AWAD 2005 (Seoul). The work of Y. Ono, Y. Takahashi, and Y. Hirayama was supported in part by a Grant-in-Aid for Scientific Research from JSPS. The review of this paper was arranged by Associate Editor B. G. Park.

PY - 2006/9

Y1 - 2006/9

N2 - Quantum mechanical features of even the most basic of semiconductor components can be expected to become of paramount importance for future nanoelectronics and quantum information technology. Here, we show that the conductivity of even a two-dimensionally extended double-gate silicon-on-insulator metal-oxide-silicon field-effect transistor can develop a distinct peak structure in its top-gate voltage dependence at low temperatures, due to the discreteness of sub-band edges resulting from quantum mechanical confinement in the vertical gating direction. Our findings are confirmed using low-temperature magnetic field measurements.

AB - Quantum mechanical features of even the most basic of semiconductor components can be expected to become of paramount importance for future nanoelectronics and quantum information technology. Here, we show that the conductivity of even a two-dimensionally extended double-gate silicon-on-insulator metal-oxide-silicon field-effect transistor can develop a distinct peak structure in its top-gate voltage dependence at low temperatures, due to the discreteness of sub-band edges resulting from quantum mechanical confinement in the vertical gating direction. Our findings are confirmed using low-temperature magnetic field measurements.

KW - Conductivity

KW - Quantization

KW - Quantum wells

KW - Silicon-on-insulator (SOI) technology

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Intersubband scattering in double-gate MOSFETs

Abstract

Keywords

ASJC Scopus subject areas

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