Intersubband scattering in double-gate MOSFETs

Kei Takashina, Yukinori Ono, Akira Fujiwara, Yasuo Takahashi, Yoshiro Hirayama

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Quantum mechanical features of even the most basic of semiconductor components can be expected to become of paramount importance for future nanoelectronics and quantum information technology. Here, we show that the conductivity of even a two-dimensionally extended double-gate silicon-on-insulator metal-oxide-silicon field-effect transistor can develop a distinct peak structure in its top-gate voltage dependence at low temperatures, due to the discreteness of sub-band edges resulting from quantum mechanical confinement in the vertical gating direction. Our findings are confirmed using low-temperature magnetic field measurements.

Original languageEnglish
Article number1695937
Pages (from-to)430-435
Number of pages6
JournalIEEE Transactions on Nanotechnology
Volume5
Issue number5
DOIs
Publication statusPublished - 2006 Sep
Externally publishedYes

Keywords

  • Conductivity
  • Quantization
  • Quantum wells
  • Silicon-on-insulator (SOI) technology

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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