Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy

K. Ohtani, M. Belmoubarik, H. Ohno

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy are investigated by a photocurrent spectroscopy. ZnO/MgZnO multiple quantum well (MQW) structures containing different ZnO well thicknesses are prepared. Photocurrent peaks are observed when the polarization of incident light is TM mode, following the intersubband selection rule. On reducing the ZnO well thickness, photocurrent peaks shifted to higher energies. Calculation indicates that the photocurrent peaks are due to intersubband transitions from the first to the third subband in ZnO/MgZnO MQWs. Comparison between experiment and calculation allows us to estimate the band offset ratio.

Original languageEnglish
Pages (from-to)2176-2178
Number of pages3
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
Publication statusPublished - 2009 Mar 15

Keywords

  • A3. Molecular Beam Epitaxy
  • A3. Quantum well
  • B1. Oxides
  • B2. Semiconducting II-VI materials
  • B3. Heterojunction semiconductor devices

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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