Abstract
The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.
| Original language | English |
|---|---|
| Pages (from-to) | 37-39 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 82 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2003 Jan 6 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Ohtani, K., Matsumoto, N., Sakuma, H., & Ohno, H. (2003). Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures. Applied Physics Letters, 82(1), 37-39. https://doi.org/10.1063/1.1534939