Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

K. Ohtani; N. Matsumoto; H. Sakuma; H. Ohno

doi:10.1063/1.1534939

Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

K. Ohtani, N. Matsumoto, H. Sakuma, H. Ohno

Leadership

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.

Original language	English
Pages (from-to)	37-39
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	1
DOIs	https://doi.org/10.1063/1.1534939
Publication status	Published - 2003 Jan 6

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1534939

Cite this

@article{53dfb307ebb84be799c46cd73b1c00de,

title = "Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures",

abstract = "The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.",

author = "K. Ohtani and N. Matsumoto and H. Sakuma and H. Ohno",

year = "2003",

month = jan,

day = "6",

doi = "10.1063/1.1534939",

language = "English",

volume = "82",

pages = "37--39",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

AU - Ohtani, K.

AU - Matsumoto, N.

AU - Sakuma, H.

AU - Ohno, H.

PY - 2003/1/6

Y1 - 2003/1/6

N2 - The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.

AB - The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.

UR - http://www.scopus.com/inward/record.url?scp=0037421354&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037421354&partnerID=8YFLogxK

U2 - 10.1063/1.1534939

DO - 10.1063/1.1534939

M3 - Article

AN - SCOPUS:0037421354

VL - 82

SP - 37

EP - 39

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -

Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this