Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

K. Ohtani; N. Matsumoto; H. Sakuma; H. Ohno

doi:10.1063/1.1534939

Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

K. Ohtani, N. Matsumoto, H. Sakuma, H. Ohno

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Abstract

The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.

Original language	English
Pages (from-to)	37-39
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	1
DOIs	https://doi.org/10.1063/1.1534939
Publication status	Published - 2003 Jan 6

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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N2 - The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.

AB - The dependence of intersubband absorption energies was investigated in n-doped InAs/AlSb multiple-quantum-well structures. The results were determined using multiband calculations combined with poisson equation. It was shown that absorption energies were larger than those of the corresponding spatially indirect bandgap between the electron ground state in the InAs well and the heavy hole ground state in the AlSb barrier. The intersubband absorption was observed in a sample with 9 ML InAs wells at 1.98 μm.

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Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures

Abstract

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