Interstitial oxygen in GeSi alloys

Ichiro Yonenaga, M. Nonaka, N. Fukata

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Interstitially dissolved oxygen atoms in the Czochralski-grown Ge1-xSix were investigated by the infrared spectroscopy together with the analysis by the secondary ion mass spectroscopy and the X-ray fine structure. In GeSi alloys in the whole composition range 0<x<1, oxygen atoms occupy preferentially a bond-center site between Si atoms to make a Si-O-Si quasi-molecule leading to a typical 1106 cm-1peak. The 1106 cm-1peak shifts to low frequency side with an increase in Ge, possibly due to the expansion of Si-Si bonds.

Original languageEnglish
Pages (from-to)539-541
Number of pages3
JournalPhysica B: Condensed Matter
Volume308-310
DOIs
Publication statusPublished - 2001 Dec 1

Keywords

  • Crystal growth
  • Germanium-silicon alloys
  • Infrared spectroscopy
  • Oxygen

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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