Interstitially dissolved oxygen atoms in the Czochralski-grown Ge1-xSix were investigated by the infrared spectroscopy together with the analysis by the secondary ion mass spectroscopy and the X-ray fine structure. In GeSi alloys in the whole composition range 0<x<1, oxygen atoms occupy preferentially a bond-center site between Si atoms to make a Si-O-Si quasi-molecule leading to a typical 1106 cm-1peak. The 1106 cm-1peak shifts to low frequency side with an increase in Ge, possibly due to the expansion of Si-Si bonds.
- Crystal growth
- Germanium-silicon alloys
- Infrared spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering