Interpretation of dominant impurities in Cu films by secondary ion mass spectrometry and glow discharge mass spectrometry

Jae Won Lim, Joon Woo Bae, Kouji Mimura, Minoru Isshiki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Cu films were deposited on Si (100) substrates at substrate bias voltages of 0V and -50V by non-mass separated ion beam deposition. SIMS and GDMS were used to determine the impurity concentrations of a Cu target and Cu films. According to the quantitative GDMS results, many unknown peaks observed in the SIMS spectra of the Cu films were assigned to cluster states such as C xHx, OxHx, and CxO xHx. Moreover, it was found that the dominant impurities in the films were H, C, N, and O elements.

Original languageEnglish
Pages (from-to)373-374
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number1 A
DOIs
Publication statusPublished - 2005 Jan 1

Keywords

  • Copper
  • GDMS
  • Impurity
  • Ion beam
  • SIMS
  • Thin film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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