Intermixing of Ge and Si during exposure of GeH4 on Si

Gen Watari, Noritaka Usami, Yoshitaro Nose, Kozo Fujiwara, Gen Sazaki, Kazuo Nakajima

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Exposure of GeH4 on Si was attempted at various temperatures to establish growth conditions for high-quality Ge on Si or Si-on-insulator, which could be utilized for on-chip 1.3-1.55 μm photodetectors. The grown film was found to be not pure-Ge but Ge-rich SiGe, and Si composition in the film increased with the rise of the growth temperature. This behavior could be utilized for growth of Ge on a compositionally graded SiGe buffer layer just by decreasing growth temperature. In fact, a preliminary experiment in order to obtain such a structure was successfully demonstrated by decreasing temperature from 700 to 500 °C at a rate of - 6.7 °C/min.

Original languageEnglish
Pages (from-to)163-165
Number of pages3
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Keywords

  • Gas-source molecular beam epitaxy
  • Raman spectroscopy
  • Silicon-germanium

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Intermixing of Ge and Si during exposure of GeH<sub>4</sub> on Si'. Together they form a unique fingerprint.

  • Cite this

    Watari, G., Usami, N., Nose, Y., Fujiwara, K., Sazaki, G., & Nakajima, K. (2006). Intermixing of Ge and Si during exposure of GeH4 on Si. Thin Solid Films, 508(1-2), 163-165. https://doi.org/10.1016/j.tsf.2005.08.403