Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

B. P. Zhang; Y. Q. Li; T. Yasuda; W. X. Wang; Y. Segawa; Keiichi Edamatsu; T. Itoh

doi:10.1063/1.122370

Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

B. P. Zhang, Y. Q. Li, T. Yasuda, W. X. Wang, Y. Segawa, Keiichi Edamatsu, T. Itoh

Broadband Engineering Division

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.

Original language	English
Pages (from-to)	1266-1268
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.122370
Publication status	Published - 1998 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.",

author = "Zhang, {B. P.} and Li, {Y. Q.} and T. Yasuda and Wang, {W. X.} and Y. Segawa and Keiichi Edamatsu and T. Itoh",

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AU - Zhang, B. P.

AU - Li, Y. Q.

AU - Yasuda, T.

AU - Wang, W. X.

AU - Segawa, Y.

AU - Edamatsu, Keiichi

AU - Itoh, T.

PY - 1998/12/1

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AB - We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.

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