Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

B. P. Zhang, Y. Q. Li, T. Yasuda, W. X. Wang, Y. Segawa, Keiichi Edamatsu, T. Itoh

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.

Original languageEnglish
Pages (from-to)1266-1268
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number9
DOIs
Publication statusPublished - 1998 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this