Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

B. P. Zhang; Y. Q. Li; T. Yasuda; W. X. Wang; Y. Segawa; K. Edamatsu; T. Itoh

doi:10.1063/1.122370

Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

B. P. Zhang, Y. Q. Li, T. Yasuda, W. X. Wang, Y. Segawa, K. Edamatsu, T. Itoh

Broadband Engineering Division

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18 Citations (Scopus)

Abstract

We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.

Original language	English
Pages (from-to)	1266-1268
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.122370
Publication status	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.122370

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title = "Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy",

abstract = "We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.",

author = "Zhang, {B. P.} and Li, {Y. Q.} and T. Yasuda and Wang, {W. X.} and Y. Segawa and K. Edamatsu and T. Itoh",

year = "1998",

doi = "10.1063/1.122370",

language = "English",

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pages = "1266--1268",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

AU - Zhang, B. P.

AU - Li, Y. Q.

AU - Yasuda, T.

AU - Wang, W. X.

AU - Segawa, Y.

AU - Edamatsu, K.

AU - Itoh, T.

PY - 1998

Y1 - 1998

N2 - We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.

AB - We report the intermittent photoluminescence of ZnCdSe quantum dots (QDs) embedded in a ZnSe matrix grown by molecular beam epitaxy. The luminous time of the QD is strongly dependent on temperature but not on excitation intensity. This indicates that the ionization of the QDs is determined predominantly by thermal excitation of carriers into the ZnSe matrix.

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M3 - Article

AN - SCOPUS:0004220522

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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ER -

Intermittent photoluminescence and thermal ionization of ZnCdSe/ZnSe quantum dots grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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