Abstract
We conducted a detailed comparative study of thermal stability properties over a thermal excitation of switching of the free layer in a magnetic tunnel junction (MTJ) with Ni81Fe19, Co90Fe10, and synthetic antiferromagnetic (Syn-AF) free layers with several strengths of interlayer exchange coupling (JEX). The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed strong JEX dependence on thermal stability parameters ( Ku V / kT ) in Syn-AF free layers. The values of Ku V / kB T for MTJs with Syn-AF free layers decreased with a decrease in the strength of JEX, and the increase in the effective volume of the Syn-AF free layer disappeared at JEX {less-than or slanted equal to} 0.52 erg / cm2. The Syn-AF free layer with JEX>0.52 erg/cm2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.
Original language | English |
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Pages (from-to) | 34-38 |
Number of pages | 5 |
Journal | Journal of Magnetism and Magnetic Materials |
Volume | 303 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2006 Aug |
Externally published | Yes |
Keywords
- Interlayer exchange coupling
- Magnetic tunnel junctions
- Synthetic antiferromagnetic free layers
- Thermal stability parameters
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics