Abstract
We conducted a detailed comparative study of thermal stability properties over a thermal excitation of switching of the free layer in a magnetic tunnel junction (MTJ) with Ni 81Fe 19, Co 90Fe 10, and synthetic antiferromagnetic (Syn-AF) free layers with several strengths of interlayer exchange coupling (J EX). The thermal stability properties were investigated using the junction magnetoresistance of current-perpendicular MTJ devices with a word line as probes. The observed sweep-rate-dependent coercivities were analyzed using the Sharrock formula. The results confirmed strong J EX dependence on thermal stability parameters ( K u V / kT ) in Syn-AF free layers. The values of K u V / k B T for MTJs with Syn-AF free layers decreased with a decrease in the strength of J EX, and the increase in the effective volume of the Syn-AF free layer disappeared at J EX {less-than or slanted equal to} 0.52 erg / cm 2. The Syn-AF free layer with J EX>0.52 erg/cm 2 is relevant for high-density spin electronic nanodevices with a low aspect ratio.
| Original language | English |
|---|---|
| Pages (from-to) | 34-38 |
| Number of pages | 5 |
| Journal | Journal of Magnetism and Magnetic Materials |
| Volume | 303 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 Aug 1 |
| Externally published | Yes |
Keywords
- Interlayer exchange coupling
- Magnetic tunnel junctions
- Synthetic antiferromagnetic free layers
- Thermal stability parameters
ASJC Scopus subject areas
- Condensed Matter Physics