Interlayer coupling in epitaxial Co2MnSi/X/Co2MnSi (X=Cr and V) trilayer structures

S. Bosu; Y. Sakuraba; K. Saito; H. Wang; S. Mitani; K. Takanashi

doi:10.1088/1742-6596/83/1/012013

Interlayer coupling in epitaxial Co₂MnSi/X/Co₂MnSi (X=Cr and V) trilayer structures

S. Bosu, Y. Sakuraba, K. Saito, H. Wang, S. Mitani, K. Takanashi

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Interlayer exchange coupling (IEC) in epitaxially grown Co ₂MnSi/X/Co₂MnSi (X=Cr and V) trilayers has been studied for different thicknesses of X spacer layers. The samples were grown by UHV-compatible dc-sputtering on an MgO (001) substrate. Strong biquadratic coupling with an unusual large oscillation period (3.3-3.5 nm) was observed for X=Cr while no evidence for non-ferromagnetic type IEC was found for X=V.

Original language	English
Article number	012013
Journal	Journal of Physics: Conference Series
Volume	83
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/83/1/012013
Publication status	Published - 2007 Jun 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1088/1742-6596/83/1/012013

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abstract = "Interlayer exchange coupling (IEC) in epitaxially grown Co 2MnSi/X/Co2MnSi (X=Cr and V) trilayers has been studied for different thicknesses of X spacer layers. The samples were grown by UHV-compatible dc-sputtering on an MgO (001) substrate. Strong biquadratic coupling with an unusual large oscillation period (3.3-3.5 nm) was observed for X=Cr while no evidence for non-ferromagnetic type IEC was found for X=V.",

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T1 - Interlayer coupling in epitaxial Co2MnSi/X/Co2MnSi (X=Cr and V) trilayer structures

AU - Bosu, S.

AU - Sakuraba, Y.

AU - Saito, K.

AU - Wang, H.

AU - Mitani, S.

AU - Takanashi, K.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Interlayer exchange coupling (IEC) in epitaxially grown Co 2MnSi/X/Co2MnSi (X=Cr and V) trilayers has been studied for different thicknesses of X spacer layers. The samples were grown by UHV-compatible dc-sputtering on an MgO (001) substrate. Strong biquadratic coupling with an unusual large oscillation period (3.3-3.5 nm) was observed for X=Cr while no evidence for non-ferromagnetic type IEC was found for X=V.

AB - Interlayer exchange coupling (IEC) in epitaxially grown Co 2MnSi/X/Co2MnSi (X=Cr and V) trilayers has been studied for different thicknesses of X spacer layers. The samples were grown by UHV-compatible dc-sputtering on an MgO (001) substrate. Strong biquadratic coupling with an unusual large oscillation period (3.3-3.5 nm) was observed for X=Cr while no evidence for non-ferromagnetic type IEC was found for X=V.

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Interlayer coupling in epitaxial Co₂MnSi/X/Co₂MnSi (X=Cr and V) trilayer structures

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