Interlayer coupling in epitaxial Co2MnSi/X/Co2MnSi (X=Cr and V) trilayer structures

S. Bosu, Y. Sakuraba, K. Saito, H. Wang, S. Mitani, K. Takanashi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Interlayer exchange coupling (IEC) in epitaxially grown Co 2MnSi/X/Co2MnSi (X=Cr and V) trilayers has been studied for different thicknesses of X spacer layers. The samples were grown by UHV-compatible dc-sputtering on an MgO (001) substrate. Strong biquadratic coupling with an unusual large oscillation period (3.3-3.5 nm) was observed for X=Cr while no evidence for non-ferromagnetic type IEC was found for X=V.

Original languageEnglish
Article number012013
JournalJournal of Physics: Conference Series
Volume83
Issue number1
DOIs
Publication statusPublished - 2007 Jun 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Interlayer coupling in epitaxial Co<sub>2</sub>MnSi/X/Co<sub>2</sub>MnSi (X=Cr and V) trilayer structures'. Together they form a unique fingerprint.

Cite this