Abstract
Two different types of antiferromagnetic (AF) interlayer coupling as a function of Si layer thickness tSi were observed in a series of (2.6 nm Fe-tSi nm Si)22 multilayers prepared by ion beam sputtering on thermally oxidized Si substrates. One AF coupling was observed around tSi = 1.2 nm at room temperature and changed into ferromagnetic (F) coupling at low temperature. This phenomenon was ascribed to a narrow gap semiconductor with impurity states in the energy gap formed at the interface. The other AF coupling was observed for tSi thicker than 1.5 nm Si, with a minimum around tSi = 2.5 nm, which was almost temperature independent; this was attributed to the formation of an amorphous Si layer for the thicker Si layers. Negative magnetoresistance was observed in the multilayers with AF coupling, which had a similar temperature dependence to that of the AF coupling.
Original language | English |
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Pages (from-to) | 41-47 |
Number of pages | 7 |
Journal | Materials Science and Engineering B |
Volume | 31 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1995 Jan 1 |
Externally published | Yes |
Keywords
- Exchange interactions
- Magnetic field effect
- Metal-semiconductor-metal structures
- Thin film
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering