Interference ferromagnet/semiconductor/ferromagnet spin field-effect transistor

T. Schäpers, J. Nitta, H. B. Heersche, H. Takayanagi

Research output: Contribution to journalArticlepeer-review

64 Citations (Scopus)


An interference ferromagnet/semiconductor/ferromagnet transistor is proposed, where the relative conductance difference between parallel and antiparallel magnetization oscillates as a function of gate voltage. The characteristics of a one-dimensional as well as a two-dimensional structure are calculated and compared. In both cases the interferences result in an enhanced spin signal. It is shown that by using the spin filtering effect of an interface barrier the signal can be further increased.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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