Abstract
An interference ferromagnet/semiconductor/ferromagnet transistor is proposed, where the relative conductance difference between parallel and antiparallel magnetization oscillates as a function of gate voltage. The characteristics of a one-dimensional as well as a two-dimensional structure are calculated and compared. In both cases the interferences result in an enhanced spin signal. It is shown that by using the spin filtering effect of an interface barrier the signal can be further increased.
| Original language | English |
|---|---|
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 64 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2001 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics