Interfacial reaction in ZrO2/Si gate-stack structure probed by photoemission spectroscopy combined with combinatorial annealing system

J. Okabayashi, S. Toyoda, H. Takahashi, H. Kumigashira, M. Oshima, K. Ikeda, G. L. Liu, Z. Liu, K. Usuda

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the mechanism of Zr silicidation from ZrO 2/Si gate-stack structure in ultralarge-scaled-integration devices by high-resolution core-level photoemission spectroscopy with annealing- temperature controlling. We have found that the interfacial SiO2 layer thickness is tunable by controlling the annealing temperature and the silicidation occurs in the narrow annealing-temperature ranges. New method by combinatorial annealing system enables to control the narrow-range annealing temperature for the observation of the silicidation processes and to discuss the silicidation chemical reaction thermodynamically based on the annealing-temperature dependence in core-level photoemission spectra

Original languageEnglish
Pages (from-to)263-266
Number of pages4
Journale-Journal of Surface Science and Nanotechnology
Volume4
DOIs
Publication statusPublished - 2006 Feb 24
Externally publishedYes

Keywords

  • Combinatorial annealing
  • Photoemission spectroscopy
  • Silicidation
  • ZrO/Si gate stack

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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