Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts

Shigeaki Zaima, Osamu Nakatsuka, Akira Sakai, Junichi Murota, Yukio Yasuda

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

We have investigated the interfacial solid-phase reaction and electrical properties of Ni/Si and Ni/SiGeC systems with various Ge and C compositions. The incorporation of Ge into Si substrates raised the transition temperature from the NiSi phase to the NiSi 2 phase. The incorporation of C effectively suppresses the agglomeration of NiSi and the formation of {111} facets at NiSi 2 /Si interface, which provides the low sheet resistance even after high temperature annealing. NiSi/Si systems show the contact resistivity as low as 10 -8 Ωcm 2 for both n + - and p + -type contacts. This is accounted by the pile-up of P at the NiSi/Si interface for n + -type and the low Schottky barrier height for p + -type contact. The pile-up of B at the NiSi/p + -Si 0.996 C 0.004 interface after the annealing at 750°C is also found.

Original languageEnglish
Pages (from-to)215-221
Number of pages7
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15

Keywords

  • Carbon
  • Contact
  • Germanium
  • Nickel
  • Silicide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint

Dive into the research topics of 'Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts'. Together they form a unique fingerprint.

Cite this