Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate

Hiroyuki Sasaki, Yutaka Wakayama, Toyohiro Chikyow, Masaki Imamura, Akinori Tanaka, Kenji Kobayashi

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO2/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO2 interface and decreases the effective work function.

Original languageEnglish
Pages (from-to)153-156
Number of pages4
JournalSolid State Communications
Issue number4
Publication statusPublished - 2006 Jul 1
Externally publishedYes


  • A. Organic semiconductors
  • A. Surfaces and interfaces
  • D. Electronic states
  • E. Photoelectron spectroscopies

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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