@inproceedings{570874a4f67e4aba90d9b90d6b4045f0,
title = "Interfacial dipole measurement of dielectric/silicon interface by X-ray photoelectron spectroscopy",
abstract = "Interfacial dipole presented at the interface of dielectric/silicon has been measured with x-ray photoelectron spectroscopy. With a use of high energy x-ray source, the band bending profile of a silicon substrate and the surface potential can be determined. By comparing the potential profile for p+ and n+ wafer, a voltage shift can be calculated. Using this method, a large negative potential shift of 0.5V at La-silicate/silicon interface has been observed. The obtained value of intcrfacial dipole is consistent with the value obtained from gate leakage current analysis.",
author = "K. Kakushima and K. Okamoto and K. Tachi and S. Sato and J. Song and T. Kawanago and P. Ahmet and N. Sugii and K. Tsutsui and T. Hattori and H. Iwai",
year = "2009",
doi = "10.1149/1.3100622",
language = "English",
isbn = "9781615672950",
series = "ECS Transactions",
number = "21",
pages = "11--15",
booktitle = "ECS Transactions - Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting",
edition = "21",
note = "Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}