Interfacial dipole measurement of dielectric/silicon interface by X-ray photoelectron spectroscopy

K. Kakushima; K. Okamoto; K. Tachi; S. Sato; J. Song; T. Kawanago; P. Ahmet; N. Sugii; K. Tsutsui; Takeo Hattori; H. Iwai

doi:10.1149/1.3100622

Interfacial dipole measurement of dielectric/silicon interface by X-ray photoelectron spectroscopy

K. Kakushima, K. Okamoto, K. Tachi, S. Sato, J. Song, T. Kawanago, P. Ahmet, N. Sugii, K. Tsutsui, Takeo Hattori, H. Iwai

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Interfacial dipole presented at the interface of dielectric/silicon has been measured with x-ray photoelectron spectroscopy. With a use of high energy x-ray source, the band bending profile of a silicon substrate and the surface potential can be determined. By comparing the potential profile for p+ and n+ wafer, a voltage shift can be calculated. Using this method, a large negative potential shift of 0.5V at La-silicate/silicon interface has been observed. The obtained value of intcrfacial dipole is consistent with the value obtained from gate leakage current analysis.

Original language	English
Title of host publication	ECS Transactions - Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting
Pages	11-15
Number of pages	5
Edition	21
DOIs	https://doi.org/10.1149/1.3100622
Publication status	Published - 2009
Event	Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 12 → 2008 Oct 17

Publication series

Name	ECS Transactions
Number	21
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting
Country	United States
City	Honolulu, HI
Period	08/10/12 → 08/10/17

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3100622

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Kakushima, K., Okamoto, K., Tachi, K., Sato, S., Song, J., Kawanago, T., Ahmet, P., Sugii, N., Tsutsui, K., Hattori, T., & Iwai, H. (2009). Interfacial dipole measurement of dielectric/silicon interface by X-ray photoelectron spectroscopy. In ECS Transactions - Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting (21 ed., pp. 11-15). (ECS Transactions; Vol. 16, No. 21). https://doi.org/10.1149/1.3100622

Interfacial dipole measurement of dielectric/silicon interface by X-ray photoelectron spectroscopy. / Kakushima, K.; Okamoto, K.; Tachi, K.; Sato, S.; Song, J.; Kawanago, T.; Ahmet, P.; Sugii, N.; Tsutsui, K.; Hattori, Takeo; Iwai, H.

ECS Transactions - Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting. 21. ed. 2009. p. 11-15 (ECS Transactions; Vol. 16, No. 21).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kakushima, K, Okamoto, K, Tachi, K, Sato, S, Song, J, Kawanago, T, Ahmet, P, Sugii, N, Tsutsui, K, Hattori, T & Iwai, H 2009, Interfacial dipole measurement of dielectric/silicon interface by X-ray photoelectron spectroscopy. in ECS Transactions - Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting. 21 edn, ECS Transactions, no. 21, vol. 16, pp. 11-15, Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting, Honolulu, HI, United States, 08/10/12. https://doi.org/10.1149/1.3100622

Kakushima, K. ; Okamoto, K. ; Tachi, K. ; Sato, S. ; Song, J. ; Kawanago, T. ; Ahmet, P. ; Sugii, N. ; Tsutsui, K. ; Hattori, Takeo ; Iwai, H. / Interfacial dipole measurement of dielectric/silicon interface by X-ray photoelectron spectroscopy. ECS Transactions - Science and Technology of Dielectrics for Active and Passive Devices - 214th ECS Meeting. 21. ed. 2009. pp. 11-15 (ECS Transactions; 21).

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abstract = "Interfacial dipole presented at the interface of dielectric/silicon has been measured with x-ray photoelectron spectroscopy. With a use of high energy x-ray source, the band bending profile of a silicon substrate and the surface potential can be determined. By comparing the potential profile for p+ and n+ wafer, a voltage shift can be calculated. Using this method, a large negative potential shift of 0.5V at La-silicate/silicon interface has been observed. The obtained value of intcrfacial dipole is consistent with the value obtained from gate leakage current analysis.",

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AU - Kakushima, K.

AU - Okamoto, K.

AU - Tachi, K.

AU - Sato, S.

AU - Song, J.

AU - Kawanago, T.

AU - Ahmet, P.

AU - Sugii, N.

AU - Tsutsui, K.

AU - Hattori, Takeo

AU - Iwai, H.

PY - 2009

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N2 - Interfacial dipole presented at the interface of dielectric/silicon has been measured with x-ray photoelectron spectroscopy. With a use of high energy x-ray source, the band bending profile of a silicon substrate and the surface potential can be determined. By comparing the potential profile for p+ and n+ wafer, a voltage shift can be calculated. Using this method, a large negative potential shift of 0.5V at La-silicate/silicon interface has been observed. The obtained value of intcrfacial dipole is consistent with the value obtained from gate leakage current analysis.

AB - Interfacial dipole presented at the interface of dielectric/silicon has been measured with x-ray photoelectron spectroscopy. With a use of high energy x-ray source, the band bending profile of a silicon substrate and the surface potential can be determined. By comparing the potential profile for p+ and n+ wafer, a voltage shift can be calculated. Using this method, a large negative potential shift of 0.5V at La-silicate/silicon interface has been observed. The obtained value of intcrfacial dipole is consistent with the value obtained from gate leakage current analysis.

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