Interfacial defect complex at the MgO/SrTiO3 heterojunction and its electronic impact

Junjie Li, Shuhui Lv, Chunlin Chen, Sumei Huang, Zhongchang Wang

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)


    Atomic defects exist in various heterojunctions and can remarkably affect their properties, yet it remains a challenging task to identify each individual defect. Here, by combining advanced transmission electron microscopy, spectroscopy and first-principles calculations, we obtain a structural and element-selective imaging of defects at an interface between MgO and SrTiO3. We demonstrate that even for structurally simple MgO and SrTiO3, their interface involves a defect complex comprising of substitutional Ti and Mg vacancies, which induce a marked shift in electronic states. The Ti atoms diffused into MgO exhibit a valence state of +4 and a certain degree of covalency to the surrounding oxygen. Such an ability to determine defects allows us to precisely alter heterojunctions so as to critically improve the device performances.

    Original languageEnglish
    Pages (from-to)51002-51007
    Number of pages6
    JournalRSC Advances
    Issue number92
    Publication statusPublished - 2014

    ASJC Scopus subject areas

    • Chemistry(all)
    • Chemical Engineering(all)


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