Interfacial chemistry and structures of ultrathin Si oxynitride films

M. Oshima, K. Kimura, K. Ono, K. Horiba, K. Nakamura, H. Kumigashira, J. H. Oh, M. Niwa, K. Usuda, N. Hirashita

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Abstract

Ultrathin SiON films with different nitrogen profiles grown by the plasma-enhanced CVD method and the rapid thermal nitridation (RTN) of SiO 2 with an NO gas have been analyzed by high-resolution angle-resolved photoelectron spectroscopy using bright synchrotron radiation to investigate interfacial chemistry and in-depth distribution of nitrogen atoms based on the second nearest neighbor effect of N 1s chemical shift. It is found that the CVD-deposited SiON film has a three-layer structure consisting of homogeneously-distributed N atoms in the [Si-Si 3-x N x ] 3 N chemical state, N atoms in the (Si-Si 3-x O x ) 3 N chemical state of about two monolayers, and the top SiO 2 layer. In contrast, N atoms in the NO-RTN SiON film exist at the SiON/Si interface as a double layer consisting of the [Si-Si 3-x N x ] 3 N lower layer and the (Si-Si 3-x O x ) 3 N upper layer with the concentration of 3.9×10 14 and 1.7×10 14 cm -2 , respectively, based on the N 1s chemical shift of about 0.6eV.

Original languageEnglish
Pages (from-to)291-295
Number of pages5
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
Publication statusPublished - 2003 Jun 30

Keywords

  • Interfacial chemistry
  • Interfacial structures
  • Photoelectron spectroscopy
  • Ultrathin Si oxynitride films

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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  • Cite this

    Oshima, M., Kimura, K., Ono, K., Horiba, K., Nakamura, K., Kumigashira, H., Oh, J. H., Niwa, M., Usuda, K., & Hirashita, N. (2003). Interfacial chemistry and structures of ultrathin Si oxynitride films. Applied Surface Science, 216(1-4 SPEC.), 291-295. https://doi.org/10.1016/S0169-4332(03)00430-6