TY - JOUR
T1 - Interfacial chemistry and structures of ultrathin Si oxynitride films
AU - Oshima, M.
AU - Kimura, K.
AU - Ono, K.
AU - Horiba, K.
AU - Nakamura, K.
AU - Kumigashira, H.
AU - Oh, J. H.
AU - Niwa, M.
AU - Usuda, K.
AU - Hirashita, N.
N1 - Funding Information:
The authors would like to thank Dr. K. Muraoka for providing SiON samples. This work has been supported by Semiconductor Technology Academic Research Center (STARC).
PY - 2003/6/30
Y1 - 2003/6/30
N2 - Ultrathin SiON films with different nitrogen profiles grown by the plasma-enhanced CVD method and the rapid thermal nitridation (RTN) of SiO 2 with an NO gas have been analyzed by high-resolution angle-resolved photoelectron spectroscopy using bright synchrotron radiation to investigate interfacial chemistry and in-depth distribution of nitrogen atoms based on the second nearest neighbor effect of N 1s chemical shift. It is found that the CVD-deposited SiON film has a three-layer structure consisting of homogeneously-distributed N atoms in the [Si-Si 3-x N x ] 3 N chemical state, N atoms in the (Si-Si 3-x O x ) 3 N chemical state of about two monolayers, and the top SiO 2 layer. In contrast, N atoms in the NO-RTN SiON film exist at the SiON/Si interface as a double layer consisting of the [Si-Si 3-x N x ] 3 N lower layer and the (Si-Si 3-x O x ) 3 N upper layer with the concentration of 3.9×10 14 and 1.7×10 14 cm -2 , respectively, based on the N 1s chemical shift of about 0.6eV.
AB - Ultrathin SiON films with different nitrogen profiles grown by the plasma-enhanced CVD method and the rapid thermal nitridation (RTN) of SiO 2 with an NO gas have been analyzed by high-resolution angle-resolved photoelectron spectroscopy using bright synchrotron radiation to investigate interfacial chemistry and in-depth distribution of nitrogen atoms based on the second nearest neighbor effect of N 1s chemical shift. It is found that the CVD-deposited SiON film has a three-layer structure consisting of homogeneously-distributed N atoms in the [Si-Si 3-x N x ] 3 N chemical state, N atoms in the (Si-Si 3-x O x ) 3 N chemical state of about two monolayers, and the top SiO 2 layer. In contrast, N atoms in the NO-RTN SiON film exist at the SiON/Si interface as a double layer consisting of the [Si-Si 3-x N x ] 3 N lower layer and the (Si-Si 3-x O x ) 3 N upper layer with the concentration of 3.9×10 14 and 1.7×10 14 cm -2 , respectively, based on the N 1s chemical shift of about 0.6eV.
KW - Interfacial chemistry
KW - Interfacial structures
KW - Photoelectron spectroscopy
KW - Ultrathin Si oxynitride films
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U2 - 10.1016/S0169-4332(03)00430-6
DO - 10.1016/S0169-4332(03)00430-6
M3 - Article
AN - SCOPUS:0038684498
VL - 216
SP - 291
EP - 295
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4 SPEC.
ER -