TY - JOUR
T1 - Interface structure of Pb(Zr,Ti)O3/MgO(001) epitaxial thin film in early stage of Stranski-Krastanov growth mode
AU - Kiguchi, Takanori
AU - Kodama, Yumiko
AU - Shimizu, Takumi
AU - Shiraishi, Takahisa
AU - Wakiya, Naoki
AU - Konno, Toyohiko J.
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2019
Y1 - 2019
N2 - This study investigated structural changes of Pb(Zr,Ti)O3/MgO(001) thin films prepared using MOCVD in the early stage of the Stranski-Krastanov growth mode. The strain state of the interface layer and the island region of PZT changes accompanied by a downward climb motion of misfit dislocations into the PZT/MgO interface with crystal growth. The local strain field around the misfit dislocation core formed in-plane compressive strain in the in-plane direction in the interface layer, which was strained tetragonally, but the island region had a pseudocubic structure. These results suggest that the residual strain induced phase stability modulation as well as Zr/Ti compositional gradient. A proposed model structure involves consequently dislocations with 110MgO slip on MgO can account for a stable interface without stacking fault. These results indicate the misfit strain-induced modulation of the interface structure and the phase stability in the early stage of the crystal growth on an atomic scale.
AB - This study investigated structural changes of Pb(Zr,Ti)O3/MgO(001) thin films prepared using MOCVD in the early stage of the Stranski-Krastanov growth mode. The strain state of the interface layer and the island region of PZT changes accompanied by a downward climb motion of misfit dislocations into the PZT/MgO interface with crystal growth. The local strain field around the misfit dislocation core formed in-plane compressive strain in the in-plane direction in the interface layer, which was strained tetragonally, but the island region had a pseudocubic structure. These results suggest that the residual strain induced phase stability modulation as well as Zr/Ti compositional gradient. A proposed model structure involves consequently dislocations with 110MgO slip on MgO can account for a stable interface without stacking fault. These results indicate the misfit strain-induced modulation of the interface structure and the phase stability in the early stage of the crystal growth on an atomic scale.
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U2 - 10.7567/1347-4065/ab3b13
DO - 10.7567/1347-4065/ab3b13
M3 - Article
AN - SCOPUS:85079786541
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - SL
M1 - SLLA08
ER -