Interface structure of AlN/TiN/MgO(001) prepared by molecular beam epitaxy

X. L. Ma, Y. Sugawara, N. Shibata, Y. Ikuhara

    Research output: Contribution to journalArticle

    3 Citations (Scopus)


    Thin AlN films were grown by molecular beam epitaxy MgO(001) substrate with a thin TiN buffer layer. The as-prepared AlN/TiN/MgO(001) interfaces have been characterized by cross-sectional high-resolution electron microscopy (HREM). It is found that the thin TiN buffer layer is epitaxially grown on the MgO(001) substrate and hexagonal AlN epitaxially on the as-received TiN(001). Based on the growth orientation relationship and HREM images, atomistic structure models for the AlN/TiN interface are proposed, image simulated, and compared with experimental images.

    Original languageEnglish
    Pages (from-to)4685-4689
    Number of pages5
    JournalJournal of Materials Research
    Issue number12
    Publication statusPublished - 1999 Dec

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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