Interface strength of SiC/SiC composites with and without helium implantation using micro-indentation test

M. Saito, A. Hasegawa, S. Ohtsuka, K. Abe

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Helium implantation effects on interface strength of SiC/SiC composite were studied using the micro-indentation fiber push-out method. Helium implantation was carried out with an accelerator at about 400 K. Total amount of implanted helium was approximately 10 000 appm. Increase of the fiber push-in load was observed in as-implanted specimen. After post-implantation-annealing at 1673 K for 1 h, the change of the fiber push-in load by helium implantation was not observed. Effects of helium implantation on the interface are discussed.

Original languageEnglish
Pages (from-to)1562-1566
Number of pages5
JournalJournal of Nuclear Materials
Volume258-263
Issue numberPART 2 B
DOIs
Publication statusPublished - 1998 Oct

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

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