Interface states for si-based mos devices with an ultrathin oxide layer: X-ray photoelectron spectroscopic measurements under biases

Hikaru Kobayashi, Yoshiyuki Yamashita, Toshio Mori, Yoshihiro Nakato, Tadahiro Komeda, Yasushiro Nlshloka

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Energy distributions of interface states for <30-Å-thick Pt/25~35-Å-thick silicon oxide/n-Si(100)> metal-oxide- semiconductor (MOS) devices have been obtained from measurements of X-ray photoelectron (XPS) spectra under biases. Upon applying bias voltages, the substrate Si(2p) peak is shifted because of a change in the occupancy of interface states by electrons, inducing a change in the potential drop across the silicon oxide layer. Devices with a native oxide layer have high interface state density near the midgap, which is attributed to isolated dangling-bond states. For MOS devices with a thermal oxide layer grown at 550°C in a wet-oxygen atmosphere, the interface states have two density maxima, one below and the other above the midgap. For devices with a thermal oxide layer formed at 700°C in wet oxygen, two density maxima of the interface states are also observed with reduced density.

Original languageEnglish
Pages (from-to)959-964
Number of pages6
JournalJapanese journal of applied physics
Volume34
Issue number2S
DOIs
Publication statusPublished - 1995 Feb
Externally publishedYes

Keywords

  • Dangling bond
  • Defect
  • Interface state
  • MOS
  • Oxide
  • Silicon
  • XPS

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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