Interface roughness produced by nitrogen atom incorporation at a SiO2/Si(100) interface

Kouta Inoue; Keita Furuno; Hirohisa Kato; Naoyoshi Tamura; Kenichi Hikazutani; Seiji Sano; Takeo Hattori

doi:10.1143/jjap.40.l539

Interface roughness produced by nitrogen atom incorporation at a SiO₂/Si(100) interface

Kouta Inoue, Keita Furuno, Hirohisa Kato, Naoyoshi Tamura, Kenichi Hikazutani, Seiji Sano, Takeo Hattori

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The critical amount of nitrogen atoms at the interface, above which the roughness of the oxynitride/Si(100) interface increases, was studied using noncontact-mode atomic force microscopy and X-ray photoelectron spectroscopy. The interface roughness was found to increase upon increasing the amount of nitrogen atoms at and near the interface if the amount of nitrogen atoms is greater than 0.37 monolayers. This increase in interface roughness was found to be reflected in an increase in surface roughness of almost the same amount.

Original language	English
Pages (from-to)	L539-L541
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	40
Issue number	6 A
DOIs	https://doi.org/10.1143/jjap.40.l539
Publication status	Published - 2001 Jun 1

Keywords

Interface
Oxynitride
Roughness
Scanning probe microscopy
Surface
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy (miscellaneous)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.40.l539

Cite this

Interface roughness produced by nitrogen atom incorporation at a SiO₂/Si(100) interface. / Inoue, Kouta; Furuno, Keita; Kato, Hirohisa; Tamura, Naoyoshi; Hikazutani, Kenichi; Sano, Seiji; Hattori, Takeo.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 40, No. 6 A, 01.06.2001, p. L539-L541.

Research output: Contribution to journal › Article › peer-review

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