Interface roughness produced by nitrogen atom incorporation at a SiO2/Si(100) interface

Kouta Inoue, Keita Furuno, Hirohisa Kato, Naoyoshi Tamura, Kenichi Hikazutani, Seiji Sano, Takeo Hattori

    Research output: Contribution to journalArticlepeer-review

    19 Citations (Scopus)

    Abstract

    The critical amount of nitrogen atoms at the interface, above which the roughness of the oxynitride/Si(100) interface increases, was studied using noncontact-mode atomic force microscopy and X-ray photoelectron spectroscopy. The interface roughness was found to increase upon increasing the amount of nitrogen atoms at and near the interface if the amount of nitrogen atoms is greater than 0.37 monolayers. This increase in interface roughness was found to be reflected in an increase in surface roughness of almost the same amount.

    Original languageEnglish
    Pages (from-to)L539-L541
    JournalJapanese Journal of Applied Physics, Part 2: Letters
    Volume40
    Issue number6 A
    DOIs
    Publication statusPublished - 2001 Jun 1

    Keywords

    • Interface
    • Oxynitride
    • Roughness
    • Scanning probe microscopy
    • Surface
    • X-ray photoelectron spectroscopy

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

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