Interface reaction of high-k gate stack structures observed by high-resolution RBS

Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

HfO2/SiO2/Si(001) structures were annealed in dry oxygen, and compositional depth profiles were measured by high-resolution Rutherford backscattering spectroscopy (HRBS). Growth of the interfacial SiO2 layer and simultaneous surface accumulation of Si were observed. The observed result indicates that silicon species are emitted from the SiO2/Si interface to release the stress induced by oxidation as was predicted by theoretical studies. The behavior of oxygen during the annealing was also observed using 18O as a tracer. The observed 18O profile suggests that oxygen molecules are decomposed into atomic oxygen in HfO2 and diffuse through the oxide layer via exchange mechanism. This is also supported by the observed activation energy of ∼ 0.6 eV for the growth of the interfacial SiO2 layer.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages103-115
Number of pages13
Edition4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 82007 Oct 10

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

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