Interface reaction behavior between Mn and SiO2 formed by RF sputter deposition

Byeong Taek Bae, Hideaki Nakano, Junichi Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The present work investigated the effects of adsorbed moisture in substrates on the growth of a self-forming barrier layer between Mn and SiO 2. In order to control the adsorbed moisture, the substrates of TEOS-SiO2/Si were pre-annealed in vacuum at various temperatures. Then, Mn thin films were deposited on the substrate with or without pre-annealing. The results of interface reaction after additional post-annealing indicated that an interface reaction layer becomes thinner with decreasing the adsorbed moisture in the SiO2 substrates.

Original languageEnglish
Title of host publicationMaterials Integration
PublisherTrans Tech Publications Ltd
Pages48-51
Number of pages4
ISBN (Print)9783037853764
DOIs
Publication statusPublished - 2012 Jan 1
EventInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011 - Sendai, Japan
Duration: 2011 Dec 12011 Dec 2

Publication series

NameKey Engineering Materials
Volume508
ISSN (Print)1013-9826
ISSN (Electronic)1662-9795

Other

OtherInt. Symposium of GCOE: Materials Integration, in Conjunction with the 2nd Int. Symposium on Advanced Synthesis and Processing Technology for Materials, ASPT 2011 and the 8th Materials Science School for Young Scientists, KINKEN-WAKATE 2011
CountryJapan
CitySendai
Period11/12/111/12/2

Keywords

  • Electric field
  • Interface reaction
  • Mn
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Bae, B. T., Nakano, H., & Koike, J. (2012). Interface reaction behavior between Mn and SiO2 formed by RF sputter deposition. In Materials Integration (pp. 48-51). (Key Engineering Materials; Vol. 508). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.508.48