Interface modification by hydrocarbon gas molecular beams in heteroepitaxy of sic on si

Tatsuo Yoshinobu, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Carbonization of Si surfaces using hydrocarbon gas molecular beams was investigated. In the case of carbonizing bare Si surfaces with C2H2, single-crystalline 3C-SiC layers were obtained only in the narrow range of a substrate temperature near 780°C. Among various surface treatments, the existence of a surface oxide layer and temperature rise during carbonization is proved to be effective in reproducibly obtaining single-crystalline 3C-SiC layers.

Original languageEnglish
Pages (from-to)L1086-L1088
JournalJapanese journal of applied physics
Volume30
Issue number6
DOIs
Publication statusPublished - 1991 Jun
Externally publishedYes

Keywords

  • Acetylene
  • Carbonization process
  • Gas source molecular beam epitaxy
  • Silicon carbide
  • Silicon surface

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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