Interface engineering for the passivation of c-Si with O 3-based atomic layer deposited AlO x for solar cell application

Hyunju Lee, Tomihisa Tachibana, Norihiro Ikeno, Hiroki Hashiguchi, Koji Arafune, Haruhiko Yoshida, Shin Ichi Satoh, Toyohiro Chikyow, Atsushi Ogura

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We have investigated the effects of deposition temperature and post-annealing on the passivation performance of AlO x films deposited by O 3-based atomic layer deposition for crystalline Si. We found that the dramatic enhancement in the passivation performance of room-temperature deposited AlO x films by post-annealing is due to the phase transformation of aluminum silicate to mullite in an AlO x interlayer and the resulting self-aligned AlO x/SiO x interface. This result is interesting for the fabrication of high-performance silicon solar cells with AlO x passivation layers.

Original languageEnglish
Article number143901
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2012 Apr 2
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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