We have investigated the effects of deposition temperature and post-annealing on the passivation performance of AlO x films deposited by O 3-based atomic layer deposition for crystalline Si. We found that the dramatic enhancement in the passivation performance of room-temperature deposited AlO x films by post-annealing is due to the phase transformation of aluminum silicate to mullite in an AlO x interlayer and the resulting self-aligned AlO x/SiO x interface. This result is interesting for the fabrication of high-performance silicon solar cells with AlO x passivation layers.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)