Interface Engineering for Controlling Device Properties of Organic Antiambipolar Transistors

Kazuyoshi Kobashi, Ryoma Hayakawa, Toyohiro Chikyow, Yutaka Wakayama

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The main purpose of this study is to establish a guideline for controlling the device properties of organic antiambipolar transistors. Our key strategy is to use interface engineering to promote carrier injection at channel/electrode interfaces and carrier accumulation at a channel/dielectric interface. The effective use of carrier injection interlayers and an insulator layer with a high dielectric constant (high-k) enabled the fine tuning of device parameters and, in particular, the onset (Von) and offset (Voff) voltages. A well-matched combination of the interlayers and a high-k dielectric layer achieved a low peak voltage (0.25 V) and a narrow on-state bias range (2.2 V), indicating that organic antiambipolar transistors have high potential as negative differential resistance devices for multivalued logic circuits.

Original languageEnglish
Pages (from-to)2762-2767
Number of pages6
JournalACS Applied Materials and Interfaces
Volume10
Issue number3
DOIs
Publication statusPublished - 2018 Jan 24
Externally publishedYes

Keywords

  • antiambipolar transistor
  • carrier injection
  • high-k dielectric
  • negative differential resistance
  • organic field-effect transistor
  • pn heterojunction

ASJC Scopus subject areas

  • Materials Science(all)

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