Interface electronic structure in MnAs on GaAs (001) studied by in situ photoemission spectroscopy

J. Okabayashi, K. Kanal, K. Kubo, S. Toyoda, M. Oshima, K. Ono, J. Yoshino

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

We have investigated the relationship between surface morphology and electronic structure of MnAs on GaAs (001) depending on the MnAs layer thickness using in situ photoemission spectroscopy. For less than 4 ML (monolayer) growth of MnAs, metallic and ferromagnetic properties were not observed due to the island growth. Valence-band photoemission spectra revealed that the localized Mn 3d states for less than 4 ML growth gradually change to the itinerant characteristics with increasing MnAs layer thickness. Core-level photoemission spectra have revealed that the Ga atoms are not segregated onto the surface and an abrupt interface is identified.

Original languageEnglish
Article number022502
JournalApplied Physics Letters
Volume89
Issue number2
DOIs
Publication statusPublished - 2006 Jul 26
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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