Interface control of advanced electronic devices -High-k/metal gate system and magnetic tunneling junction

M. Niwa, S. Sato, T. Endoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Key issues on interface control of the constituent materials are taken up and reviewed with respect to scaled logic and memory. For logic devices with high-k/metal gate, amount of oxygen vacancy in the high-k dielectric determines the effective workfunction by modulating the workfunction derived from the high-k/metal gate materials. Concerning the EOT control of HfO2, by controlling the oxidation time of pre-deposited metal-Hf, precise thickness control of the interfacial layer including no interface layer with excellent uniformity is achieved. In the meantime, for a magnetic tunnel junction (MTJ) for spin-transfer-torque switching, a redox reaction is found to occur at the surface of Ta/CoFeB/MgO/CoFeB where the oxidized cobalt and iron are reduced by the boron atoms that diffuse toward the top CoFeB surface. It is imperative to protect the MTJ surface from oxidation/ hydroxylation to obtain an accurate tunnel current.

Original languageEnglish
Title of host publicationECS Transactions
EditorsDurga Misra, Stefan De Gendt, Michel Housa, Koji Kita, Dolf Landheer
PublisherElectrochemical Society Inc.
Pages133-145
Number of pages13
Edition1
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2017 Jan 1
Event15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting - National Harbor, United States
Duration: 2017 Oct 12017 Oct 5

Publication series

NameECS Transactions
Number1
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other15th Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics: In Memory of Samares Kar - 232nd ECS Meeting
CountryUnited States
CityNational Harbor
Period17/10/117/10/5

ASJC Scopus subject areas

  • Engineering(all)

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