Interface chemistry and electronic structure of GaN/ MgAl2 O4 revealed by angle-resolved photoemission spectroscopy

G. He, T. Chikyow, Shigefusa F. Chichibu

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8 Citations (Scopus)


By modifying the MgAl2 O4 substrate surface using chemical etching and thermal passivation, high-quality GaN films have been achieved on the MgAl2 O4 (111) substrate via metalorganic chemical vapor deposition. The interface chemistry and electronic structure of GaN/ MgAl2 O4 interface have been investigated by angle-resolved photoemission spectroscopy. It has been noted that thermal passivation leads to the formation of Al2 O3 buffered layer, which remains thermally stable during deposition and are primarily responsible for the epitaxial growth of GaN on MgAl2 O4 (111) substrate.

Original languageEnglish
Article number161907
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2010 Oct 18

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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