Interface characterization of magnetic tunnel junctions by using tunneling spectroscopy

Y. Ando, M. Hayashi, M. Oogane, H. Kubota, T. Miyazaki

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The interface characterization of magnetic tunnel junctions using tunneling spectroscopy was discussed. It was found the tunnel magnetoresistance (TMR) ratio increased at the doped Al thickness of 0.2 nm after annealing at 250°C. The analysis showed that over the corresponding voltage, the TMR ration as a function of the bias decreased however the influence was relatively small.

Original languageEnglish
Pages (from-to)7023-7025
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number10 2
DOIs
Publication statusPublished - 2003 May 15

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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