Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

M. Yoshitake, K. Ohmori, T. Chikyow

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

X-ray photoelectron spectroscopy (XPS)measurements of a Pt/HfO 2(SiO2)/Si metal-oxide-semiconductor (MOS) structure under a bias voltage applied between the gatemetal and the silicon substrate were studied. The binding energy shifts of Pt 4f, Hf 4f,O 1s and Si 2p according to the applied voltage were investigated using the MOS structure. After the influence of measurements on the results was carefully examined under various conditions, the amount of the shifts was analyzed from a viewpoint of band alignment. Based on the experimental results, a new way of interpreting the deviation of the electric properties from the ideal ones in a band diagram was proposed. It was demonstrated that the biased XPS is a very powerful method to understand the origin of the electric properties of MOS.

Original languageEnglish
Pages (from-to)70-76
Number of pages7
JournalSurface and Interface Analysis
Volume42
Issue number2
DOIs
Publication statusPublished - 2010 Feb

Keywords

  • Biased
  • Gate metal
  • High-k
  • Interface
  • XPS

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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