Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

M. Yoshitake; K. Ohmori; T. Chikyow

doi:10.1002/sia.3154

Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

M. Yoshitake, K. Ohmori, T. Chikyow

Advanced Institute for Materials Research (AIMR)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

X-ray photoelectron spectroscopy (XPS)measurements of a Pt/HfO ₂(SiO₂)/Si metal-oxide-semiconductor (MOS) structure under a bias voltage applied between the gatemetal and the silicon substrate were studied. The binding energy shifts of Pt 4f, Hf 4f,O 1s and Si 2p according to the applied voltage were investigated using the MOS structure. After the influence of measurements on the results was carefully examined under various conditions, the amount of the shifts was analyzed from a viewpoint of band alignment. Based on the experimental results, a new way of interpreting the deviation of the electric properties from the ideal ones in a band diagram was proposed. It was demonstrated that the biased XPS is a very powerful method to understand the origin of the electric properties of MOS.

Original language	English
Pages (from-to)	70-76
Number of pages	7
Journal	Surface and Interface Analysis
Volume	42
Issue number	2
DOIs	https://doi.org/10.1002/sia.3154
Publication status	Published - 2010 Feb

Keywords

Biased
Gate metal
High-k
Interface
XPS

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1002/sia.3154

Cite this

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title = "Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy",

abstract = "X-ray photoelectron spectroscopy (XPS)measurements of a Pt/HfO 2(SiO2)/Si metal-oxide-semiconductor (MOS) structure under a bias voltage applied between the gatemetal and the silicon substrate were studied. The binding energy shifts of Pt 4f, Hf 4f,O 1s and Si 2p according to the applied voltage were investigated using the MOS structure. After the influence of measurements on the results was carefully examined under various conditions, the amount of the shifts was analyzed from a viewpoint of band alignment. Based on the experimental results, a new way of interpreting the deviation of the electric properties from the ideal ones in a band diagram was proposed. It was demonstrated that the biased XPS is a very powerful method to understand the origin of the electric properties of MOS.",

keywords = "Biased, Gate metal, High-k, Interface, XPS",

author = "M. Yoshitake and K. Ohmori and T. Chikyow",

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doi = "10.1002/sia.3154",

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volume = "42",

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journal = "Surface and Interface Analysis",

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publisher = "John Wiley and Sons Ltd",

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TY - JOUR

T1 - Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

AU - Yoshitake, M.

AU - Ohmori, K.

AU - Chikyow, T.

PY - 2010/2

Y1 - 2010/2

N2 - X-ray photoelectron spectroscopy (XPS)measurements of a Pt/HfO 2(SiO2)/Si metal-oxide-semiconductor (MOS) structure under a bias voltage applied between the gatemetal and the silicon substrate were studied. The binding energy shifts of Pt 4f, Hf 4f,O 1s and Si 2p according to the applied voltage were investigated using the MOS structure. After the influence of measurements on the results was carefully examined under various conditions, the amount of the shifts was analyzed from a viewpoint of band alignment. Based on the experimental results, a new way of interpreting the deviation of the electric properties from the ideal ones in a band diagram was proposed. It was demonstrated that the biased XPS is a very powerful method to understand the origin of the electric properties of MOS.

AB - X-ray photoelectron spectroscopy (XPS)measurements of a Pt/HfO 2(SiO2)/Si metal-oxide-semiconductor (MOS) structure under a bias voltage applied between the gatemetal and the silicon substrate were studied. The binding energy shifts of Pt 4f, Hf 4f,O 1s and Si 2p according to the applied voltage were investigated using the MOS structure. After the influence of measurements on the results was carefully examined under various conditions, the amount of the shifts was analyzed from a viewpoint of band alignment. Based on the experimental results, a new way of interpreting the deviation of the electric properties from the ideal ones in a band diagram was proposed. It was demonstrated that the biased XPS is a very powerful method to understand the origin of the electric properties of MOS.

KW - Biased

KW - Gate metal

KW - High-k

KW - Interface

KW - XPS

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JF - Surface and Interface Analysis

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Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Abstract

Keywords

ASJC Scopus subject areas

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