Interface atomic-scale structure and its impact on quantum electron transport

Zhongchang Wang, Mitsuhiro Saito, Susumu Tsukimoto, Yuichi Ikuhara

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)

    Abstract

    Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

    Original languageEnglish
    Pages (from-to)4966-4969
    Number of pages4
    JournalAdvanced Materials
    Volume21
    Issue number48
    DOIs
    Publication statusPublished - 2009 Dec 28

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

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