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Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices
M. Kouda, T. Kawanago, P. Ahmet, K. Natori, T. Hattori, H. Iwai, K. Kakushima, A. Nishiyama, N. Sugii, K. Tsutsui
Research output: Contribution to journal › Article › peer-review
22
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(Scopus)