Interdiffusion of si and ge atoms during gas-source mbe of ge on si(100) at 500–800°c

Maki Suemitsu; Kazuhiro Chiba; Nobuo Miyamoto

doi:10.1143/JJAP.29.L1591

Interdiffusion of si and ge atoms during gas-source mbe of ge on si(100) at 500–800°c

Maki Suemitsu, Kazuhiro Chiba, Nobuo Miyamoto

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3 Citations (Scopus)

Abstract

Germanium growth on Si(100) using GeH₄ gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.

Original language	English
Pages (from-to)	L1591-L1593
Journal	Japanese journal of applied physics
Volume	29
Issue number	9
DOIs	https://doi.org/10.1143/JJAP.29.L1591
Publication status	Published - 1990 Sep

Keywords

Auger electron spectroscopy
Electron-probe
Gas-source molecular beam epitaxy
Ge
Germane
Heteroepitaxy
Microanalysis
Raman scattering
Si

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Interdiffusion of si and ge atoms during gas-source mbe of ge on si(100) at 500–800°c",

abstract = "Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 {\AA}. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.",

keywords = "Auger electron spectroscopy, Electron-probe, Gas-source molecular beam epitaxy, Ge, Germane, Heteroepitaxy, Microanalysis, Raman scattering, Si",

author = "Maki Suemitsu and Kazuhiro Chiba and Nobuo Miyamoto",

year = "1990",

month = sep,

doi = "10.1143/JJAP.29.L1591",

language = "English",

volume = "29",

pages = "L1591--L1593",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Interdiffusion of si and ge atoms during gas-source mbe of ge on si(100) at 500–800°c

AU - Suemitsu, Maki

AU - Chiba, Kazuhiro

AU - Miyamoto, Nobuo

PY - 1990/9

Y1 - 1990/9

N2 - Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.

AB - Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.

KW - Auger electron spectroscopy

KW - Electron-probe

KW - Gas-source molecular beam epitaxy

KW - Ge

KW - Germane

KW - Heteroepitaxy

KW - Microanalysis

KW - Raman scattering

KW - Si

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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