Abstract
Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.
Original language | English |
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Pages (from-to) | L1591-L1593 |
Journal | Japanese journal of applied physics |
Volume | 29 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1990 Sep |
Externally published | Yes |
Keywords
- Auger electron spectroscopy
- Electron-probe
- Gas-source molecular beam epitaxy
- Ge
- Germane
- Heteroepitaxy
- Microanalysis
- Raman scattering
- Si
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)