Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.
- Auger electron spectroscopy
- Gas-source molecular beam epitaxy
- Raman scattering
ASJC Scopus subject areas
- Physics and Astronomy(all)