Interdiffusion of si and ge atoms during gas-source mbe of ge on si(100) at 500–800°c

Maki Suemitsu, Kazuhiro Chiba, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Germanium growth on Si(100) using GeH4 gas-source molecular beam epitaxy has been performed in the temperature range of 500–800°C with the grown film thickness of about 1000 Å. From electron-probe microanalysis, Raman spectroscopy, and Auger electron spectroscopy measurements, it was indicated that a noticeable interdiffusion of Si and Ge atoms occurred during growth in this temperature range.

Original languageEnglish
Pages (from-to)L1591-L1593
JournalJapanese journal of applied physics
Issue number9
Publication statusPublished - 1990 Sep
Externally publishedYes


  • Auger electron spectroscopy
  • Electron-probe
  • Gas-source molecular beam epitaxy
  • Ge
  • Germane
  • Heteroepitaxy
  • Microanalysis
  • Raman scattering
  • Si

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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