Interdiffusion of Al and Ga in Si-Implanted GaAs-AlAs Superlattices

Yoshiro Hirayama, Yoshiji Horikoshi, Hiroshi Okamoto

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Interdiffusion in GaAs-AlAs superlattices after Si implantation at 200 keV was studied under various annealing conditions. Interdiffusion of Al and Ga at the GaAs-AlAs interface was not observed before annealing, and compositional disordering due to interdiffusion was found to be controlled by changing the annealing temperature, annealing time, and ion dose. Interdiffusion at the interface followed electrical activation of implanted Si. The interdiffusion coefficients for Al and Ga were estimated to be (2-5)×10-18cm2/s and (1-3)×10‒17cm2/s at annealing temperatures of 750° and 800°C, respectively, in the dose range 2×1013-2×1014cm-2. The interdiffusion coefficients were found to increase markedly above a dose of -2×1014cm-2. The results of direct TEM imaging were in good agreement with the predictions from the evaluated interdiffusion coefficients.

Original languageEnglish
Pages (from-to)1568-1572
Number of pages5
JournalJapanese journal of applied physics
Volume23
Issue number12
DOIs
Publication statusPublished - 1984 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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