Interdefect correlation during thermal recovery of (formula presented) in semi-insulating GaAs: Proposal of a three-center-complex model

A. Fukuyama, T. Ikari, Y. Akashi, M. Suemitsu

Research output: Contribution to journalArticlepeer-review

Abstract

Time evolution of (formula presented) thermal recovery has been investigated in detail by a piezoelectric photothermal method. Results showed a simple saturating behavior for (formula presented) and a sigmoid-function-like behavior for (formula presented) which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode indicates correlation between defects, for which recovery promotion by charge transfers from recovered to unrecovered (formula presented) defects can be suggested. A three-center-complex model (formula presented) is proposed for the microstructure of (formula presented).

Original languageEnglish
Number of pages1
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number11
DOIs
Publication statusPublished - 2003 Jan 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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