Interdefect correlation during thermal recovery of EL2 in semi-insulating GaAs: Proposal of a three-center-complex model

A. Fukuyama, T. Ikari, Y. Akashi, M. Suemitsu

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Time evolution of EL2 thermal recovery has been investigated in detail by a piezoelectric photothermal method. Results showed a simple saturating behavior for T> 120 K and a sigmoid-function-like behavior for T< 120 K, which were both quantitatively analyzed with an autocatalytic-reaction rate equation. The latter recovery mode indicates correlation between defects, for which recovery promotion by charge transfers from recovered to unrecovered EL2 defects can be suggested. A three-center-complex model (VAs-ASGa-GaAs) is proposed for the microstructure of EL2.

Original languageEnglish
Article number113202
Pages (from-to)1132021-1132024
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number11
Publication statusPublished - 2003 Mar

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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