Interband infrared photodetectors based on HgTe-CdHgTe quantum-well heterostructures

V. Ya Aleshkin, A. A. Dubinov, S. V. Morozov, M. Ryzhii, T. Otsuji, V. Mitin, M. S. Shur, V. Ryzhii

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.

Original languageEnglish
Pages (from-to)1349-1358
Number of pages10
JournalOptical Materials Express
Volume8
Issue number5
DOIs
Publication statusPublished - 2018 May 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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