We calculate the characteristics of interband HgTe-CdHgTe quantum-well infrared photodetectors (QWIPs). Due to a small probability of the electron capture into the QWs, the interband HgTe-CdHgTe QWIPs can exhibit very high photoconductive gain. Our analysis demonstrates the significant potential advantages of these devices compared to the conventional CdHgTe photodetectors and the A3B5 heterostructures.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials