Interactions of impurities with dislocations: Mechanical effects

K. Sumino, I. Yonenaga

Research output: Chapter in Book/Report/Conference proceedingChapter

29 Citations (Scopus)

Abstract

Impurity effects on the dislocation behavior and mechanical strength of elemental and III-V compound semiconductor crystals, originating in the interaction between dislocations and impurities, are reviewed on the current understanding. A variety of impurities in semiconductor crystals affect the dynamic activities of individual dislocations and, in turn, the mechanical strength of the crystal through two kinds of microscopic mechanisms; one is modification of the dislocation mobility in glide motion and the other is the immobilization of dislocations. It is shown how such impurity effects on the behavior of individual dislocations are reflected on the macroscopic mechanical properties of semiconductor crystals.

Original languageEnglish
Title of host publicationDefect Interaction and Clustering in Semiconductors
PublisherTrans Tech Publications Ltd
Pages145-176
Number of pages32
ISBN (Print)3908450659, 9783908450658
Publication statusPublished - 2002 Jan 1

Publication series

NameSolid State Phenomena
Volume85-86
ISSN (Print)1012-0394

Keywords

  • Compound semiconductors
  • Dislocation generation
  • Dislocation locking
  • Dislocation velocity
  • Dislocations
  • Elemental semiconductors
  • Impurities
  • Impurity agglomeration
  • Impurity-dislocation interaction
  • Mechanical strength
  • Stress-strain characteristics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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