Interaction of sodium atoms with stacking faults in silicon with different Fermi levels

Yutaka Ohno, Haruhiko Morito, Kentaro Kutsukake, Ichiro Yonenaga, Tatsuya Yokoi, Atsutomo Nakamura, Katsuyuki Matsunaga

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Variation in the formation energy of stacking faults (SFs) with the contamination of Na atoms was examined in Si crystals with different Fermi levels. Na atoms agglomerated at SFs under an electronic interaction, reducing the SF formation energy. The energy decreased with the decrease of the Fermi level: It was reduced by more than 10mJ/m2 in p-type Si, whereas it was barely reduced in n-type Si. Owing to the energy reduction, Na atoms agglomerating at SFs in p-type Si are stable compared with those in n-type Si, and this hypothesis was supported by ab initio calculations.

Original languageEnglish
Article number061303
JournalApplied Physics Express
Volume11
Issue number6
DOIs
Publication statusPublished - 2018 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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