Interaction of dopant atoms with stacking faults in silicon

Yutaka Ohno, Yuki Tokumoto, Hiroto Taneichi, Ichiro Yonenaga, Kensuke Togase, Sigeto R. Nishitani

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The width of a stacking fault ribbon bound by a pair of partial dislocations in silicon crystals was unchanged when boron and gallium atoms of p-type dopant were agglomerated nearby the ribbon by annealing, even though the width increased when n-type dopant atoms were agglomerated as previously reported [Y. Ohno, Y. Tokumoto, I. Yonenaga, Thin Solid Films, accepted for publication]. The origin of the width-increase in n-type crystals was proposed as the reduction of the stacking fault energy, from 58±5 down to 46±5 mJ/m 2, due to an electronic interaction between the ribbon and the n-type dopant atoms, and the interaction energy was estimated to be 0.15±0.05 eV. On the other hand, the interaction of p-type dopant atoms with stacking faults was not detected.

Original languageEnglish
Pages (from-to)3006-3008
Number of pages3
JournalPhysica B: Condensed Matter
Volume407
Issue number15
DOIs
Publication statusPublished - 2012 Aug 1

Keywords

  • Segregation
  • Silicon
  • Stacking fault energy
  • Stacking faults

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Ohno, Y., Tokumoto, Y., Taneichi, H., Yonenaga, I., Togase, K., & Nishitani, S. R. (2012). Interaction of dopant atoms with stacking faults in silicon. Physica B: Condensed Matter, 407(15), 3006-3008. https://doi.org/10.1016/j.physb.2011.08.064